Electron Beam Lithography


Electron Beam Lithography (EBL) is a nanofabrication technique that uses a focused beam of electrons to create patterns with sub-10 nm resolution on a substrate. The process involves the use of a resist material that is exposed to the electron beam, causing a chemical or physical change in the resist. This change can then be used to selectively remove or deposit material on the substrate, creating the desired pattern. EBL is commonly used in the fabrication of microelectronics, photonics, and nanotechnology devices, as well as in research applications such as the study of quantum materials and devices.


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